SRH03P098LD33TR-G Specs and Replacement

Type Designator: SRH03P098LD33TR-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 58.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 308 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: PDFN3.3X3.3

SRH03P098LD33TR-G substitution

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SRH03P098LD33TR-G datasheet

 4.1. Size:904K  sanrise-tech
 srh03p098l.pdf pdf_icon

SRH03P098LD33TR-G

Datasheet 9.8m , 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8 enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4 especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V ... See More ⇒

 8.1. Size:1057K  sanrise-tech
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SRH03P098LD33TR-G

Datasheet 14.2m , 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8 The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4 technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3 The SRH03P142L break down vol... See More ⇒

Detailed specifications: SRC65R800E, SRC65R800M2, SRC70R048B, SRC70R230, SRC70R380E, SRC70R670E, SRC70R900, SRH03P098LMTR-G, IRFB4227, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, SRH04P500L, SRT03N010LD56, SRT03N010LD56TR-GS, SRT03N011L

Keywords - SRH03P098LD33TR-G MOSFET specs

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