All MOSFET. SRH03P098LD33TR-G Datasheet

 

SRH03P098LD33TR-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRH03P098LD33TR-G
   Marking Code: 03P098LD33G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 58.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: PDFN3.3X3.3

 SRH03P098LD33TR-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRH03P098LD33TR-G Datasheet (PDF)

 4.1. Size:904K  sanrise-tech
 srh03p098l.pdf

SRH03P098LD33TR-G SRH03P098LD33TR-G

Datasheet 9.8m, 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V

 8.1. Size:1057K  sanrise-tech
 srh03p142l.pdf

SRH03P098LD33TR-G SRH03P098LD33TR-G

Datasheet 14.2m, 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3The SRH03P142L break down vol

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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