SRH03P142LD33TR-G Datasheet and Replacement
Type Designator: SRH03P142LD33TR-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 38.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 211 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
Package: PDFN3.3X3.3
SRH03P142LD33TR-G substitution
SRH03P142LD33TR-G Datasheet (PDF)
srh03p142l.pdf
Datasheet 14.2m, 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3The SRH03P142L break down vol
srh03p098l.pdf
Datasheet 9.8m, 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V
Datasheet: SRC70R048B , SRC70R230 , SRC70R380E , SRC70R670E , SRC70R900 , SRH03P098LMTR-G , SRH03P098LD33TR-G , SRH03P142LMTR-G , 10N60 , SRH03P142LDTR-G , SRH04N260L , SRH04P500L , SRT03N010LD56 , SRT03N010LD56TR-GS , SRT03N011L , SRT03N016L , SRT03N020L .
Keywords - SRH03P142LD33TR-G MOSFET datasheet
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SRH03P142LD33TR-G substitution
SRH03P142LD33TR-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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