All MOSFET. SRH03P142LDTR-G Datasheet

 

SRH03P142LDTR-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRH03P142LDTR-G
   Marking Code: SRH03P142LDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 45.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 211 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
   Package: TO-252

 SRH03P142LDTR-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRH03P142LDTR-G Datasheet (PDF)

 4.1. Size:1057K  sanrise-tech
 srh03p142l.pdf

SRH03P142LDTR-G SRH03P142LDTR-G

Datasheet 14.2m, 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3The SRH03P142L break down vol

 8.1. Size:904K  sanrise-tech
 srh03p098l.pdf

SRH03P142LDTR-G SRH03P142LDTR-G

Datasheet 9.8m, 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK2519-01

 

 
Back to Top