SRH03P142LDTR-G MOSFET. Datasheet pdf. Equivalent
Type Designator: SRH03P142LDTR-G
Marking Code: SRH03P142LDG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 45.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 211 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
Package: TO-252
SRH03P142LDTR-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRH03P142LDTR-G Datasheet (PDF)
srh03p142l.pdf
Datasheet 14.2m, 30V, P-Channel Power MOSFET SRH03P142L General Description Symbol Drain 5,6,7,8The Sanrise SRH03P142L P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench Gate 4technology. This high density process is especially tailored to minimize on-state resistance. Source 1,2,3The SRH03P142L break down vol
srh03p098l.pdf
Datasheet 9.8m, 30V, P-Channel Power MOSFET SRH03P098L General Description Symbol The Sanrise SRH03P098L P-Channel logic Drain 5,6,7,8enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is Gate 4especially tailored to minimize on-state resistance. The SRH03P098L break down voltage is -30V
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