SRH04P500L MOSFET. Datasheet pdf. Equivalent
Type Designator: SRH04P500L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.5 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 72 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP-8
SRH04P500L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRH04P500L Datasheet (PDF)
srh04p500l.pdf
Datasheet 50m, 40V, P-Channel Power MOSFET SRH04P500L General Description Symbol The Sanrise SRH04P500L uses advanced trench Drain 5,6,7,8technology. It has low on resistance, low gate charge and fast switching time. This device is ideal for motor driver and BMS applications. Gate 4The SRH04P500L break down voltage is 40V and it has a high rugged avalanche characteristics
srh04n260l.pdf
Datasheet 26m, 40V, N-Channel Power MOSFET SRH04N260L General Description Symbol The Sanrise SRH04N260L uses advanced trench Drain 5,6,7,8technology. It has extremely low on resistance, low gate charge and fast switching time. This Gate 4device is ideal for high frequency switching and synchronous rectification. The SRH04N260L break down voltage is 40V Source 1,2,3and it
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
