SRH04P500L Specs and Replacement

Type Designator: SRH04P500L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP-8

SRH04P500L substitution

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SRH04P500L datasheet

 ..1. Size:466K  sanrise-tech
 srh04p500l.pdf pdf_icon

SRH04P500L

Datasheet 50m , 40V, P-Channel Power MOSFET SRH04P500L General Description Symbol The Sanrise SRH04P500L uses advanced trench Drain 5,6,7,8 technology. It has low on resistance, low gate charge and fast switching time. This device is ideal for motor driver and BMS applications. Gate 4 The SRH04P500L break down voltage is 40V and it has a high rugged avalanche characteristics... See More ⇒

 9.1. Size:424K  sanrise-tech
 srh04n260l.pdf pdf_icon

SRH04P500L

Datasheet 26m , 40V, N-Channel Power MOSFET SRH04N260L General Description Symbol The Sanrise SRH04N260L uses advanced trench Drain 5,6,7,8 technology. It has extremely low on resistance, low gate charge and fast switching time. This Gate 4 device is ideal for high frequency switching and synchronous rectification. The SRH04N260L break down voltage is 40V Source 1,2,3 and it ... See More ⇒

Detailed specifications: SRC70R670E, SRC70R900, SRH03P098LMTR-G, SRH03P098LD33TR-G, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, 2N7000, SRT03N010LD56, SRT03N010LD56TR-GS, SRT03N011L, SRT03N016L, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G

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