All MOSFET. SRT045N012H Datasheet

 

SRT045N012H MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRT045N012H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 228 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 73 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: PDFN5X6

 SRT045N012H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRT045N012H Datasheet (PDF)

 ..1. Size:1222K  sanrise-tech
 srt045n012h.pdf

SRT045N012H SRT045N012H

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 0.1. Size:1675K  sanrise-tech
 srt045n012hs.pdf

SRT045N012H SRT045N012H

Datasheet 1.2m, 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

 6.1. Size:1387K  sanrise-tech
 srt045n025h.pdf

SRT045N012H SRT045N012H

Datasheet 2.5m, 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.2. Size:1277K  sanrise-tech
 srt045n060h.pdf

SRT045N012H SRT045N012H

Datasheet 6.0m, 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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