SRT045N012H. Аналоги и основные параметры

Наименование производителя: SRT045N012H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 131 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 45 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 228 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 2000 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для SRT045N012H

- подборⓘ MOSFET транзистора по параметрам

 

SRT045N012H даташит

 ..1. Size:1222K  sanrise-tech
 srt045n012h.pdf pdf_icon

SRT045N012H

Datasheet 1.2m , 45V, N-Channel Power MOSFET SRT045N012H General Description Symbol The Sanrise SRT045N012H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 0.1. Size:1675K  sanrise-tech
 srt045n012hs.pdf pdf_icon

SRT045N012H

Datasheet 1.2m , 45V, N-Channel Power MOSFET SRT045N012HS General Description Symbol The Sanrise SRT045N012HS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require super

 6.1. Size:1387K  sanrise-tech
 srt045n025h.pdf pdf_icon

SRT045N012H

Datasheet 2.5m , 45V, N-Channel Power MOSFET SRT045N025H General Description Symbol The Sanrise SRT045N025H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.2. Size:1277K  sanrise-tech
 srt045n060h.pdf pdf_icon

SRT045N012H

Datasheet 6.0m , 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRT03N010LD56, SRT03N010LD56TR-GS, SRT03N011L, SRT03N016L, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, STP75NF75, SRT045N012HS2, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, SRT04N012L, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS