All MOSFET. SRT04N016IL Datasheet

 

SRT04N016IL Datasheet and Replacement


   Type Designator: SRT04N016IL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 173 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: PDFN5X6
 

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SRT04N016IL Datasheet (PDF)

 ..1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N016IL

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require super

 5.1. Size:1745K  sanrise-tech
 srt04n016ls.pdf pdf_icon

SRT04N016IL

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 5.2. Size:1350K  sanrise-tech
 srt04n016l.pdf pdf_icon

SRT04N016IL

Datasheet1.6m, 40V, N-Channel Power MOSFET SRT04N016LGeneral Description SymbolThe Sanrise SRT04N016L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

 6.1. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N016IL

Datasheet1.2m, 40V, N-Channel Power MOSFET SRT04N012LGeneral Description SymbolThe Sanrise SRT04N012L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

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Datasheet: SRT03N023L , SRT03N050LD56TR-G , SRT045N012H , SRT045N012HS2 , SRT045N012HTC-GS , SRT045N025H , SRT045N060H , SRT04N012L , SPP20N60C3 , SRT04N016L , SRT04N016LS2TR-GS , SRT04N016LTC-GS , SRT04N016LDTR-GS , SRT04N024L , SRT04N024LD56TR-GS , SRT04N037L , SRT04N037LS .

History: SI5N60-TM3-T | RU30C8H | SRT10N047HC56TR-G | WSD14N10DNG | STH270N4F3-6 | IRFB9N60APBF | NCE40H11K

Keywords - SRT04N016IL MOSFET datasheet

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