SRT04N016IL MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT04N016IL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 173 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 73 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 1600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: PDFN5X6
SRT04N016IL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT04N016IL Datasheet (PDF)
srt04n016il.pdf
Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require super
srt04n016ls.pdf
Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio
srt04n016l.pdf
Datasheet1.6m, 40V, N-Channel Power MOSFET SRT04N016LGeneral Description SymbolThe Sanrise SRT04N016L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous
srt04n012l.pdf
Datasheet1.2m, 40V, N-Channel Power MOSFET SRT04N012LGeneral Description SymbolThe Sanrise SRT04N012L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
