SRT04N016IL. Аналоги и основные параметры

Наименование производителя: SRT04N016IL

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 173 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 1600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для SRT04N016IL

- подборⓘ MOSFET транзистора по параметрам

 

SRT04N016IL даташит

 ..1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N016IL

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super

 5.1. Size:1745K  sanrise-tech
 srt04n016ls.pdf pdf_icon

SRT04N016IL

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 5.2. Size:1350K  sanrise-tech
 srt04n016l.pdf pdf_icon

SRT04N016IL

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016L General Description Symbol The Sanrise SRT04N016L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 6.1. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N016IL

Datasheet 1.2m , 40V, N-Channel Power MOSFET SRT04N012L General Description Symbol The Sanrise SRT04N012L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, SRT04N012L, K3569, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, SRT04N024LD56TR-GS, SRT04N037L, SRT04N037LS