All MOSFET. SRT08N015HTLTR-G Datasheet

 

SRT08N015HTLTR-G Datasheet and Replacement


   Type Designator: SRT08N015HTLTR-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 400 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: TOLL
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SRT08N015HTLTR-G Datasheet (PDF)

 0.1. Size:894K  sanrise-tech
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SRT08N015HTLTR-G

Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and

 7.1. Size:1338K  sanrise-tech
srt08n055h.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

 7.2. Size:789K  sanrise-tech
srt08n025hc56tr-g.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 7.3. Size:1104K  sanrise-tech
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SRT08N015HTLTR-G

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDD6776A | APT10021JFLL | SSW65R190S2 | NP180N04TUJ | SM4186T9RL | SRT10N160LD | NCE30P12BS

Keywords - SRT08N015HTLTR-G MOSFET datasheet

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