SRT08N015HTLTR-G. Аналоги и основные параметры

Наименование производителя: SRT08N015HTLTR-G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 312 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 400 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 38 ns

Cossⓘ - Выходная емкость: 2100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0011 Ohm

Тип корпуса: TOLL

Аналог (замена) для SRT08N015HTLTR-G

- подборⓘ MOSFET транзистора по параметрам

 

SRT08N015HTLTR-G даташит

 0.1. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and

 7.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio

 7.2. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 7.3. Size:1104K  sanrise-tech
 srt08n025h.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRT06N022HS, SRT06N022HT, SRT06N027HD, SRT06N027HT, SRT06N095LD56G, SRT06N095LMG, SRT06N095LDG, SRT06N095LD33G, IRFP450, SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD