Справочник MOSFET. SRT08N015HTLTR-G

 

SRT08N015HTLTR-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SRT08N015HTLTR-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 312 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 400 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 2100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0011 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для SRT08N015HTLTR-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

SRT08N015HTLTR-G Datasheet (PDF)

 0.1. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and

 7.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

 7.2. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 7.3. Size:1104K  sanrise-tech
 srt08n025h.pdf pdf_icon

SRT08N015HTLTR-G

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

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Другие MOSFET... SRT06N022HS , SRT06N022HT , SRT06N027HD , SRT06N027HT , SRT06N095LD56G , SRT06N095LMG , SRT06N095LDG , SRT06N095LD33G , IRF1407 , SRT08N025HD , SRT08N025HT , SRT08N025HS , SRT08N025HC56TR-G , SRT08N055H , SRT08N100LM , SRT08N100LT , SRT08N100LD .

History: SSF80R240SFD | TSA20N50M | SJMN099R60ZSW | IRFB31N20DPBF | IRL3102SPBF | SRH03P098LMTR-G | DMG3420U

 

 
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