SRT08N025HC56TR-G Specs and Replacement

Type Designator: SRT08N025HC56TR-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: PDFN5X6

SRT08N025HC56TR-G substitution

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SRT08N025HC56TR-G datasheet

 0.1. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S... See More ⇒

 4.1. Size:1104K  sanrise-tech
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SRT08N025HC56TR-G

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior ... See More ⇒

 7.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio... See More ⇒

 7.2. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and... See More ⇒

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Detailed specifications: SRT06N095LD56G, SRT06N095LMG, SRT06N095LDG, SRT06N095LD33G, SRT08N015HTLTR-G, SRT08N025HD, SRT08N025HT, SRT08N025HS, 4N60, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD, SRT10N022HTLTR-G, SRT10N040HC, SRT10N040L, SRT10N043HD

Keywords - SRT08N025HC56TR-G MOSFET specs

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