Справочник MOSFET. SRT08N025HC56TR-G

 

SRT08N025HC56TR-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SRT08N025HC56TR-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 187.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 75 nC
   tr ⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 810 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: PDFN5X6
 

 Аналог (замена) для SRT08N025HC56TR-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

SRT08N025HC56TR-G Datasheet (PDF)

 0.1. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 4.1. Size:1104K  sanrise-tech
 srt08n025h.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 7.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

 7.2. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N025HC56TR-G

Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and

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Другие MOSFET... SRT06N095LD56G , SRT06N095LMG , SRT06N095LDG , SRT06N095LD33G , SRT08N015HTLTR-G , SRT08N025HD , SRT08N025HT , SRT08N025HS , 10N65 , SRT08N055H , SRT08N100LM , SRT08N100LT , SRT08N100LD , SRT10N022HTLTR-G , SRT10N040HC , SRT10N040L , SRT10N043HD .

History: FTD04N65C | SWP3205 | NTR4170NT1G | KML0D4N20TV | 2SK1582 | ISCPL322D

 

 
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