FDMS2502SDC
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS2502SDC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 114
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 49
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 95
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012
Ohm
Package:
POWER56
FDMS2502SDC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS2502SDC
Datasheet (PDF)
..1. Size:317K fairchild semi
fdms2502sdc.pdf 
July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at
7.1. Size:420K fairchild semi
fdms2506sdc.pdf
July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m
7.2. Size:298K fairchild semi
fdms2504sdc.pdf
July 2010FDMS2504SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m
7.3. Size:302K fairchild semi
fdms2508sdc.pdf
July 2010FDMS2508SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m
Datasheet: FDME510PZT
, FDML7610S
, STM9930A
, FDMQ8203
, STM9926
, STM9435
, FDMS0312S
, STM8820
, 18N50
, FDMS2504SDC
, FDMS2506SDC
, FDMS2508SDC
, FDMS2510SDC
, FDMS2572
, FDMS2672
, STM8601
, FDMS2734
.
