FDMS2502SDC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS2502SDC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 114 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
Тип корпуса: POWER56
- подбор MOSFET транзистора по параметрам
FDMS2502SDC Datasheet (PDF)
fdms2502sdc.pdf

July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at
fdms2506sdc.pdf

July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m
fdms2504sdc.pdf

July 2010FDMS2504SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m
fdms2508sdc.pdf

July 2010FDMS2508SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m
Другие MOSFET... FDME510PZT , FDML7610S , STM9930A , FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 , 4N60 , FDMS2504SDC , FDMS2506SDC , FDMS2508SDC , FDMS2510SDC , FDMS2572 , FDMS2672 , STM8601 , FDMS2734 .
History: 2N6914 | AOI482 | APM4012NU | FS10KM-12 | TK12A80W | 2SK1758 | IXFP18N65X2
History: 2N6914 | AOI482 | APM4012NU | FS10KM-12 | TK12A80W | 2SK1758 | IXFP18N65X2



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