All MOSFET. SRT08N055H Datasheet

 

SRT08N055H MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRT08N055H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36.5 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN5X6 PDFN3.3X3.3

 SRT08N055H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRT08N055H Datasheet (PDF)

 ..1. Size:1338K  sanrise-tech
 srt08n055h.pdf

SRT08N055H SRT08N055H

Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

 7.1. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf

SRT08N055H SRT08N055H

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 7.2. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf

SRT08N055H SRT08N055H

Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and

 7.3. Size:1104K  sanrise-tech
 srt08n025h.pdf

SRT08N055H SRT08N055H

Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMZB1200UPE | IRCZ14 | TMPF9N50 | 2SK3778-01 | JMTL3401A | JFFM18N50C | PP9H06BV

 

 
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