SRT08N055H Specs and Replacement
Type Designator: SRT08N055H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PDFN5X6 PDFN3.3X3.3
SRT08N055H substitution
- MOSFET ⓘ Cross-Reference Search
SRT08N055H datasheet
srt08n055h.pdf
Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio... See More ⇒
srt08n025hc56tr-g.pdf
Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S... See More ⇒
srt08n015htltr-g.pdf
Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and... See More ⇒
srt08n025h.pdf
Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior ... See More ⇒
Detailed specifications: SRT06N095LMG, SRT06N095LDG, SRT06N095LD33G, SRT08N015HTLTR-G, SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, IRFP250, SRT08N100LM, SRT08N100LT, SRT08N100LD, SRT10N022HTLTR-G, SRT10N040HC, SRT10N040L, SRT10N043HD, SRT10N043HT
Keywords - SRT08N055H MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
