SRT08N055H. Аналоги и основные параметры

Наименование производителя: SRT08N055H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 510 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm

Тип корпуса: PDFN5X6 PDFN3.3X3.3

Аналог (замена) для SRT08N055H

- подборⓘ MOSFET транзистора по параметрам

 

SRT08N055H даташит

 ..1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N055H

Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio

 7.1. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N055H

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 7.2. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N055H

Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and

 7.3. Size:1104K  sanrise-tech
 srt08n025h.pdf pdf_icon

SRT08N055H

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRT06N095LMG, SRT06N095LDG, SRT06N095LD33G, SRT08N015HTLTR-G, SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, IRFP250, SRT08N100LM, SRT08N100LT, SRT08N100LD, SRT10N022HTLTR-G, SRT10N040HC, SRT10N040L, SRT10N043HD, SRT10N043HT