SRT10N070HD Specs and Replacement

Type Designator: SRT10N070HD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: PDFN5X6

SRT10N070HD substitution

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SRT10N070HD datasheet

 4.1. Size:1766K  sanrise-tech
 srt10n070h.pdf pdf_icon

SRT10N070HD

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070H General Description Symbol The Sanrise SRT10N070H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-220C PDFN5*6 density... See More ⇒

 5.1. Size:1094K  sanrise-tech
 srt10n070l.pdf pdf_icon

SRT10N070HD

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re... See More ⇒

 7.1. Size:1506K  sanrise-tech
 srt10n090l.pdf pdf_icon

SRT10N070HD

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous ... See More ⇒

 7.2. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N070HD

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒

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Detailed specifications: SRT10N047HD56, SRT10N047HTC, SRT10N047HTF, SRT10N047HS2, SRT10N047HT, SRT10N047HTL, SRT10N047HC56TR-G, SRT10N047LD56TR-G, AO3400A, SRT10N070HT, SRT10N070L, SRT10N090L, SRT10N090L, SRT10N090L, SRT10N120LM, SRT10N120LD1, SRT10N120LD

Keywords - SRT10N070HD MOSFET specs

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