SRT10N070HD. Аналоги и основные параметры

Наименование производителя: SRT10N070HD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 96.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 84 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 720 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для SRT10N070HD

- подборⓘ MOSFET транзистора по параметрам

 

SRT10N070HD даташит

 4.1. Size:1766K  sanrise-tech
 srt10n070h.pdf pdf_icon

SRT10N070HD

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070H General Description Symbol The Sanrise SRT10N070H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-220C PDFN5*6 density

 5.1. Size:1094K  sanrise-tech
 srt10n070l.pdf pdf_icon

SRT10N070HD

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re

 7.1. Size:1506K  sanrise-tech
 srt10n090l.pdf pdf_icon

SRT10N070HD

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 7.2. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N070HD

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

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Другие IGBT... SRT10N047HD56, SRT10N047HTC, SRT10N047HTF, SRT10N047HS2, SRT10N047HT, SRT10N047HTL, SRT10N047HC56TR-G, SRT10N047LD56TR-G, AO3400A, SRT10N070HT, SRT10N070L, SRT10N090L, SRT10N090L, SRT10N090L, SRT10N120LM, SRT10N120LD1, SRT10N120LD