SRT10N090L MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT10N090L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 68 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 28.5 nC
Rise Time (tr): 4.3 nS
Drain-Source Capacitance (Cd): 530 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO220
SRT10N090L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT10N090L Datasheet (PDF)
srt10n090l.pdf
Datasheet9m, 100V, N-Channel Power MOSFET SRT10N090LGeneral Description SymbolThe Sanrise SRT10N090L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous
srt10n043h.pdf
Datasheet4.3m, 100V, N-Channel Power MOSFET SRT10N043HGeneral Description SymbolThe Sanrise SRT10N043H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt10n070l.pdf
Datasheet 7m, 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which re
srt10n040l.pdf
Datasheet 4.0m, 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superi
srt10n070h.pdf
Datasheet7m, 100V, N-Channel Power MOSFET SRT10N070HGeneral Description SymbolThe Sanrise SRT10N070H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-220C PDFN5*6density
srt10n047hc56tr-g.pdf
Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which
srt10n022htltr-g.pdf
Datasheet1.9m, 100V, N-Channel Power MOSFET SRT10N022HTLTR-GGeneral Description SymbolThe Sanrise SRT10N022HTLTR-G is a low voltagepower MOSFET, fabricated using advanced split gatetrench technology. The resulting device has extremelylow on resistance, low Qg charge and fast switchingtime, making it especially suitable for applicationswhich require superior power density and s
srt10n040hc.pdf
Datasheet4.0m, 100V, N-Channel Power MOSFET SRT10N040HCGeneral Description SymbolThe Sanrise SRT10N040HC is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchron
srt10n047ld56tr-g.pdf
Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which
srt10n047h.pdf
Datasheet4.7m, 100V, N-Channel Power MOSFET SRT10N047HGeneral Description SymbolThe Sanrise SRT10N047H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-263-2/TO-220C/TO-24
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMK175N10HG4
