SRT10N090L. Аналоги и основные параметры

Наименование производителя: SRT10N090L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4.3 ns

Cossⓘ - Выходная емкость: 530 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm

Тип корпуса: TO220

Аналог (замена) для SRT10N090L

- подборⓘ MOSFET транзистора по параметрам

 

SRT10N090L даташит

 ..1. Size:1506K  sanrise-tech
 srt10n090l.pdf pdf_icon

SRT10N090L

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 7.1. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N090L

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 7.2. Size:1094K  sanrise-tech
 srt10n070l.pdf pdf_icon

SRT10N090L

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re

 7.3. Size:1152K  sanrise-tech
 srt10n040l.pdf pdf_icon

SRT10N090L

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superi

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRT10N047HTL, SRT10N047HC56TR-G, SRT10N047LD56TR-G, SRT10N070HD, SRT10N070HT, SRT10N070L, SRT10N090L, SRT10N090L, IRFZ48N, SRT10N120LM, SRT10N120LD1, SRT10N120LD, SRT10N120LTC, SRT10N120LD56, SRT10N130H, SRT10N160LD56, SRT10N160LM