SRT10N230LD56 Specs and Replacement
Type Designator: SRT10N230LD56
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ -
Output Capacitance: 218 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: PDFN5X6
SRT10N230LD56 substitution
- MOSFET ⓘ Cross-Reference Search
SRT10N230LD56 datasheet
4.1. Size:1103K sanrise-tech
srt10n230l.pdf 
Datasheet 23m , 100V, N-Channel Power MOSFET SRT10N230L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N230L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r... See More ⇒
5.1. Size:1423K sanrise-tech
srt10n230h.pdf
Datasheet 23m , 100V, N-Channel Power MOSFET SRT10N230H General Description Symbol The Sanrise SRT10N230H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior ... See More ⇒
8.1. Size:1506K sanrise-tech
srt10n090l.pdf
Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous ... See More ⇒
8.2. Size:1919K sanrise-tech
srt10n043h.pdf
Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒
8.3. Size:1548K sanrise-tech
srt10n160l.pdf
Datasheet 16m , 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r... See More ⇒
8.4. Size:1094K sanrise-tech
srt10n070l.pdf
Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re... See More ⇒
8.5. Size:1049K sanrise-tech
srt10n120l.pdf
Datasheet 10m , 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4 time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source... See More ⇒
8.6. Size:1152K sanrise-tech
srt10n040l.pdf
Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superi... See More ⇒
8.7. Size:1766K sanrise-tech
srt10n070h.pdf
Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070H General Description Symbol The Sanrise SRT10N070H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-220C PDFN5*6 density... See More ⇒
8.8. Size:728K sanrise-tech
srt10n047hc56tr-g.pdf
Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which ... See More ⇒
8.9. Size:883K sanrise-tech
srt10n022htltr-g.pdf
Datasheet 1.9m , 100V, N-Channel Power MOSFET SRT10N022HTLTR-G General Description Symbol The Sanrise SRT10N022HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low Qg charge and fast switching time, making it especially suitable for applications which require superior power density and s... See More ⇒
8.10. Size:1302K sanrise-tech
srt10n040hc.pdf
Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040HC General Description Symbol The Sanrise SRT10N040HC is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchron... See More ⇒
8.11. Size:768K sanrise-tech
srt10n047ld56tr-g.pdf
Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which ... See More ⇒
8.12. Size:1247K sanrise-tech
srt10n130h.pdf
Datasheet 13m , 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio... See More ⇒
8.13. Size:1764K sanrise-tech
srt10n047h.pdf
Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047H General Description Symbol The Sanrise SRT10N047H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-263-2/TO-220C/TO-24... See More ⇒
Detailed specifications: SRT10N120LD56, SRT10N130H, SRT10N160LD56, SRT10N160LM, SRT10N160LD, SRT10N230HD, SRT10N230HM, SRT10N230HD56, 60N06, SRT10N230LM, SRT10N230LD, SRT12N058HD56, SRT12N058HTC, SRT12N058HS2, SRT15N050HTC, SRT15N050HS2, SRT15N050HT
Keywords - SRT10N230LD56 MOSFET specs
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