SRT10N230LD56 - описание и поиск аналогов

 4.1. Size:1103K  sanrise-tech
 srt10n230l.pdf 

Datasheet 23m , 100V, N-Channel Power MOSFET SRT10N230L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N230L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r

 5.1. Size:1423K  sanrise-tech
 srt10n230h.pdf 

Datasheet 23m , 100V, N-Channel Power MOSFET SRT10N230H General Description Symbol The Sanrise SRT10N230H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 8.1. Size:1506K  sanrise-tech
 srt10n090l.pdf 

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 8.2. Size:1919K  sanrise-tech
 srt10n043h.pdf 

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 8.3. Size:1548K  sanrise-tech
 srt10n160l.pdf 

Datasheet 16m , 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r

 8.4. Size:1094K  sanrise-tech
 srt10n070l.pdf 

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re

 8.5. Size:1049K  sanrise-tech
 srt10n120l.pdf 

Datasheet 10m , 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4 time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

 8.6. Size:1152K  sanrise-tech
 srt10n040l.pdf 

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superi

 8.7. Size:1766K  sanrise-tech
 srt10n070h.pdf 

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070H General Description Symbol The Sanrise SRT10N070H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-220C PDFN5*6 density

 8.8. Size:728K  sanrise-tech
 srt10n047hc56tr-g.pdf 

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

 8.9. Size:883K  sanrise-tech
 srt10n022htltr-g.pdf 

Datasheet 1.9m , 100V, N-Channel Power MOSFET SRT10N022HTLTR-G General Description Symbol The Sanrise SRT10N022HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low Qg charge and fast switching time, making it especially suitable for applications which require superior power density and s

 8.10. Size:1302K  sanrise-tech
 srt10n040hc.pdf 

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040HC General Description Symbol The Sanrise SRT10N040HC is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchron

 8.11. Size:768K  sanrise-tech
 srt10n047ld56tr-g.pdf 

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

 8.12. Size:1247K  sanrise-tech
 srt10n130h.pdf 

Datasheet 13m , 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio

 8.13. Size:1764K  sanrise-tech
 srt10n047h.pdf 

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047H General Description Symbol The Sanrise SRT10N047H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-263-2/TO-220C/TO-24