SRT12N058HD56 Specs and Replacement
Type Designator: SRT12N058HD56
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 98 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: PDFN5X6
SRT12N058HD56 substitution
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SRT12N058HD56 datasheet
srt12n058h.pdf
Datasheet 5.8m , 120V, N-Channel Power MOSFET SRT12N058H General Description Symbol The Sanrise SRT12N058H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior... See More ⇒
Detailed specifications: SRT10N160LM, SRT10N160LD, SRT10N230HD, SRT10N230HM, SRT10N230HD56, SRT10N230LD56, SRT10N230LM, SRT10N230LD, IRF730, SRT12N058HTC, SRT12N058HS2, SRT15N050HTC, SRT15N050HS2, SRT15N050HT, SRT15N050HTL, SRT15N059HTC, SRT15N059HS2
Keywords - SRT12N058HD56 MOSFET specs
SRT12N058HD56 cross reference
SRT12N058HD56 equivalent finder
SRT12N058HD56 pdf lookup
SRT12N058HD56 substitution
SRT12N058HD56 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
