SRT12N058HD56 MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT12N058HD56
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 98 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49.9 nC
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 1300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: PDFN5X6
SRT12N058HD56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT12N058HD56 Datasheet (PDF)
4.1. Size:1670K sanrise-tech
srt12n058h.pdf
srt12n058h.pdf
Datasheet 5.8m, 120V, N-Channel Power MOSFET SRT12N058H General Description Symbol The Sanrise SRT12N058H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
