All MOSFET. SRT12N058HD56 Datasheet

 

SRT12N058HD56 Datasheet and Replacement


   Type Designator: SRT12N058HD56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 49.9 nC
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: PDFN5X6
 

 SRT12N058HD56 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SRT12N058HD56 Datasheet (PDF)

 4.1. Size:1670K  sanrise-tech
 srt12n058h.pdf pdf_icon

SRT12N058HD56

Datasheet 5.8m, 120V, N-Channel Power MOSFET SRT12N058H General Description Symbol The Sanrise SRT12N058H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet: SRT10N160LM , SRT10N160LD , SRT10N230HD , SRT10N230HM , SRT10N230HD56 , SRT10N230LD56 , SRT10N230LM , SRT10N230LD , BS170 , SRT12N058HTC , SRT12N058HS2 , SRT15N050HTC , SRT15N050HS2 , SRT15N050HT , SRT15N050HTL , SRT15N059HTC , SRT15N059HS2 .

History: NCEP070N12D

Keywords - SRT12N058HD56 MOSFET datasheet

 SRT12N058HD56 cross reference
 SRT12N058HD56 equivalent finder
 SRT12N058HD56 lookup
 SRT12N058HD56 substitution
 SRT12N058HD56 replacement

 

 
Back to Top

 


 
.