FDMS2510SDC
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS2510SDC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 49
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029
Ohm
Package:
POWER56
FDMS2510SDC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS2510SDC
Datasheet (PDF)
..1. Size:309K fairchild semi
fdms2510sdc.pdf 
July 2010FDMS2510SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at
8.1. Size:317K fairchild semi
fdms2502sdc.pdf
July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at
8.2. Size:420K fairchild semi
fdms2506sdc.pdf
July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m
8.3. Size:298K fairchild semi
fdms2504sdc.pdf
July 2010FDMS2504SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m
8.4. Size:513K fairchild semi
fdms2572.pdf
February 2007FDMS2572tmN-Channel UltraFET Trench MOSFET 150V, 27A, 47mFeatures General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller
8.5. Size:302K fairchild semi
fdms2508sdc.pdf
July 2010FDMS2508SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m
Datasheet: STM9926
, STM9435
, FDMS0312S
, STM8820
, FDMS2502SDC
, FDMS2504SDC
, FDMS2506SDC
, FDMS2508SDC
, CS150N03A8
, FDMS2572
, FDMS2672
, STM8601
, FDMS2734
, FDMS3500
, FDMS3572
, FDMS3600S
, FDMS3602S
.
