FDMS2510SDC - описание и поиск аналогов

July 2010 FDMS2510SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at

July 2010 FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at

July 2010 FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m

July 2010 FDMS2504SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m

February 2007 FDMS2572 tm N-Channel UltraFET Trench MOSFET 150V, 27A, 47m Features General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5A Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller

July 2010 FDMS2508SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m