SRT12N058HTC MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT12N058HTC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 133 W
Maximum Drain-Source Voltage |Vds|: 120 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 102 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 49.9 nC
Rise Time (tr): 6.5 nS
Drain-Source Capacitance (Cd): 1300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
Package: TO220
SRT12N058HTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT12N058HTC Datasheet (PDF)
srt12n058h.pdf
Datasheet 5.8m, 120V, N-Channel Power MOSFET SRT12N058H General Description Symbol The Sanrise SRT12N058H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFP150N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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