All MOSFET. FDMS2572 Datasheet

 

FDMS2572 Datasheet and Replacement


   Type Designator: FDMS2572
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 31 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: POWER56
 

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FDMS2572 Datasheet (PDF)

 ..1. Size:513K  fairchild semi
 fdms2572.pdf pdf_icon

FDMS2572

February 2007FDMS2572tmN-Channel UltraFET Trench MOSFET 150V, 27A, 47mFeatures General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller

 8.1. Size:309K  fairchild semi
 fdms2510sdc.pdf pdf_icon

FDMS2572

July 2010FDMS2510SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at

 8.2. Size:317K  fairchild semi
 fdms2502sdc.pdf pdf_icon

FDMS2572

July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at

 8.3. Size:420K  fairchild semi
 fdms2506sdc.pdf pdf_icon

FDMS2572

July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m

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Datasheet: STM9435 , FDMS0312S , STM8820 , FDMS2502SDC , FDMS2504SDC , FDMS2506SDC , FDMS2508SDC , FDMS2510SDC , IRLB4132 , FDMS2672 , STM8601 , FDMS2734 , FDMS3500 , FDMS3572 , FDMS3600S , FDMS3602S , FDMS3604AS .

History: CM2N80C

Keywords - FDMS2572 MOSFET datasheet

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