FDMS2572 - параметры транзистора MOSFET, его аналоги, datasheet

FDMS2572 Datasheet (PDF)

..1. Size:513K fairchild semi
fdms2572.pdf pdf_icon

February 2007FDMS2572tmN-Channel UltraFET Trench MOSFET 150V, 27A, 47mFeatures General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller

8.1. Size:309K fairchild semi
fdms2510sdc.pdf pdf_icon

July 2010FDMS2510SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at

8.2. Size:317K fairchild semi
fdms2502sdc.pdf pdf_icon

July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at

8.3. Size:420K fairchild semi
fdms2506sdc.pdf pdf_icon

July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m