All MOSFET. CMD5941 Datasheet

 

CMD5941 Datasheet and Replacement


   Type Designator: CMD5941
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: TO252
 

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CMD5941 Datasheet (PDF)

 ..1. Size:1082K  1
 cmd5941 cmu5941.pdf pdf_icon

CMD5941

CMD5941/CMU5941P-Channel Silicon MOSFETGeneral Description Product SummaryThe 5941 uses advanced trench BVDSS RDSON ID technology and design to provide -100V 135m -25Aexcellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications.Inverters Motor driveDC / DC converterFeatures P-ChannelTO-252/251 Pin ConfigurationDLow ON-

 9.1. Size:896K  cn vbsemi
 cmd5950.pdf pdf_icon

CMD5941

CMD5950www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2

Datasheet: HY3007P , HY3007M , HY3007B , HY3007PS , HY3007PM , NCE80H11 , S80N10R , S80N10S , TK10A60D , CMU5941 , MMBF4860 , N6006NZ , STP180N4F6 , TK10P50W , LCS50P03 , HCCW120R040H1 , HCCZ120R040H1 .

History: 2SK2592 | SML5020BN | IRLB8314PBF | BUZ102 | PFF12N65 | STP180N4F6 | SI7454DP

Keywords - CMD5941 MOSFET datasheet

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