CMD5941 Specs and Replacement

Type Designator: CMD5941

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TO252

CMD5941 substitution

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CMD5941 datasheet

 ..1. Size:1082K  1
 cmd5941 cmu5941.pdf pdf_icon

CMD5941

CMD5941/CMU5941 P-Channel Silicon MOSFET General Description Product Summary The 5941 uses advanced trench BVDSS RDSON ID technology and design to provide -100V 135m -25A excellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications. Inverters Motor drive DC / DC converter Features P-Channel TO-252/251 Pin Configuration D Low ON-... See More ⇒

 9.1. Size:896K  cn vbsemi
 cmd5950.pdf pdf_icon

CMD5941

CMD5950 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2... See More ⇒

Detailed specifications: HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, NCE80H11, S80N10R, S80N10S, 13N50, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W, LCS50P03, HCCW120R040H1, HCCZ120R040H1

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.