All MOSFET. CMU5941 Datasheet

 

CMU5941 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMU5941
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: TO251

 CMU5941 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMU5941 Datasheet (PDF)

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 cmd5941 cmu5941.pdf

CMU5941 CMU5941

CMD5941/CMU5941P-Channel Silicon MOSFETGeneral Description Product SummaryThe 5941 uses advanced trench BVDSS RDSON ID technology and design to provide -100V 135m -25Aexcellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications.Inverters Motor driveDC / DC converterFeatures P-ChannelTO-252/251 Pin ConfigurationDLow ON-

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