STP180N4F6 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP180N4F6
Marking Code: 180N4F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
Rise Time (tr): 150 nS
Drain-Source Capacitance (Cd): 745 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0027 Ohm
Package: TO220
STP180N4F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP180N4F6 Datasheet (PDF)
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