STP180N4F6 Specs and Replacement

Type Designator: STP180N4F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO220

STP180N4F6 substitution

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STP180N4F6 datasheet

 ..1. Size:669K  1
stp180n4f6.pdf pdf_icon

STP180N4F6

STP180N4F6 N-channel 40 V, 2.1 m typ., 120 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP180N4F6 40 V 2.7 m 120 A 190 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power ... See More ⇒

 7.1. Size:712K  st
stp180n10f3.pdf pdf_icon

STP180N4F6

STP180N10F3 N-channel 100 V, 4.5 m , 120 A STripFET III Power MOSFET TO-220 Features RDS(on) TAB Order codes VDSS ID max. STP180N10F3 100 V 5.1 m 120 A Ultra low on-resistance 3 2 100% avalanche tested 1 TO-220 Applications High current switching applications Description This device is an N-channel enhancement mode Figure 1. Internal schematic diagram Po... See More ⇒

 7.2. Size:448K  st
stb180n55f3 stp180n55f3.pdf pdf_icon

STP180N4F6

STB180N55F3 STP180N55F3 N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STB180N55F3 55V 3.5m 120A(1) 330W STP180N55F3 55V 3.8m 120A(1) 330W 1. Value limited by wire bonding 3 3 1 2 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the l... See More ⇒

 7.3. Size:791K  st
stp180ns04zc.pdf pdf_icon

STP180N4F6

STP180NS04ZC N-channel 40 V clamped 3.6 m typ., 120 A fully protected SAFeFET Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 m 120 A Low capacitance and gate charge 100% avalanche tested 3 2 175 C maximum junction temperature 1 TO-220 Applications Switching and line... See More ⇒

Detailed specifications: HY3007PM, NCE80H11, S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, IRF1010E, TK10P50W, LCS50P03, HCCW120R040H1, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL, VS3510DS

Keywords - STP180N4F6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.