HCCZ120R040H1 Specs and Replacement
Type Designator: HCCZ120R040H1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 259 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO247-4L
HCCZ120R040H1 substitution
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HCCZ120R040H1 datasheet
hccz120r040h1.pdf
HCCZ120R040H1 1200V/55A N-Channel Advanced Power MOSFET V DS 1200 V Features R DS(on),TYP@ VGS=20 V 42 m SiC MOSFET technology I D(Silicon limited) 55 A High blocking voltage with low on-resistance High-speed switching with low capacitances TO-247-4L Very low switching losses Low reverse recovery (Qrr) 100% Avalanche tested,100% Rg tested Part ID Package ... See More ⇒
hccz120r080h1.pdf
HCCZ120R080H1 1200V/80m N-Channel SIC Power MOSFET Features V 1200 V DS High speed switching with low on-resistance R 80 m DS(on),TYP@25 Very low switching losses I 36 A D Controllable dv/dt Avalanche Ruggedness and 100% Avalanche test TO-247-4L Robust body diode 1 2 3 4 Part ID Package Type Marking Packing HCCZ120R080H1 TO-247-4L 120R080H1 30pcs/P... See More ⇒
Detailed specifications: CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W, LCS50P03, HCCW120R040H1, CS150N03A8, VS2622AA, VS2622AD, VS2622AL, VS3510DS, VS3602GPMT, VS3603GPMT, VS3604AT, VS3604DM
Keywords - HCCZ120R040H1 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
