All MOSFET. HCCZ120R040H1 Datasheet

 

HCCZ120R040H1 Datasheet and Replacement


   Type Designator: HCCZ120R040H1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 259 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO247-4L
 

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HCCZ120R040H1 Datasheet (PDF)

 ..1. Size:3498K  cn vgsemi
 hccz120r040h1.pdf pdf_icon

HCCZ120R040H1

HCCZ120R040H11200V/55A N-Channel Advanced Power MOSFETV DS 1200 VFeaturesR DS(on),TYP@ VGS=20 V 42 m SiC MOSFET technologyI D(Silicon limited) 55 A High blocking voltage with low on-resistance High-speed switching with low capacitancesTO-247-4L Very low switching losses Low reverse recovery (Qrr) 100% Avalanche tested,100% Rg testedPart ID Package

 5.1. Size:1127K  cn vgsemi
 hccz120r080h1.pdf pdf_icon

HCCZ120R040H1

HCCZ120R080H11200V/80m N-Channel SIC Power MOSFETFeaturesV 1200 VDS High speed switching with low on-resistanceR 80 mDS(on),TYP@25 Very low switching lossesI 36 AD Controllable dv/dt Avalanche Ruggedness and 100% Avalanche test TO-247-4L Robust body diode1234Part ID Package Type Marking PackingHCCZ120R080H1 TO-247-4L 120R080H1 30pcs/P

Datasheet: CMD5941 , CMU5941 , MMBF4860 , N6006NZ , STP180N4F6 , TK10P50W , LCS50P03 , HCCW120R040H1 , IRLB4132 , VS2622AA , VS2622AD , VS2622AL , VS3510DS , VS3602GPMT , VS3603GPMT , VS3604AT , VS3604DM .

History: NVBLS001N06C | 2P985B-2

Keywords - HCCZ120R040H1 MOSFET datasheet

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