VS3620DP2-G
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3620DP2-G
Marking Code: 3620DP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 520
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package: PDFN5X6 DUAL
VS3620DP2-G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3620DP2-G
Datasheet (PDF)
..1. Size:1033K cn vgsemi
vs3620dp2-g.pdf 
VS3620DP2-G30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.6 4.6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 7.6 7.6 m Very low on-resistanceI D(Wire bond Limited) 45 45 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Dual Opt2 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimiz
6.1. Size:983K cn vgsemi
vs3620dp-g.pdf
VS3620DP-G30V/36A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 4.9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 7.3 m Enhancement modeI D(Silicon Limited) 56 A Very low on-resistanceI D(Package Limited) 36 A VitoMOS TechnologyPDFN5x6 Dual Fast Switching and High efficiency 100% Avalanche Tested,100% Rg TestedPar
7.1. Size:1036K cn vgsemi
vs3620de-g.pdf
VS3620DE-G30V/18A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 9 m VitoMOS TechnologyI D(Silicon Limited) 37 A Fast Switching and High efficiencyI D(Package Limited) 18 A 100% Avalanche TestedPDFN3333 DualPart ID Package Type Marking PackingVS3620DE-G PDFN3333 Dual 36
8.1. Size:2373K cn vanguard
vs3620gpmc.pdf
VS3620GPMC30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.1 m VitoMOS TechnologyI D(Silicon Limited) 60 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN5x6Part ID Package Type Marking PackingVS3620GPMC PDFN5x6 3620GP 3000PCS/Reel
8.2. Size:973K cn vgsemi
vs3620ga.pdf
VS3620GA30V/23A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.8 m VitoMOS TechnologyI D(Silicon Limited) 55 A Fast Switching and High efficiencyI D(Package Limited) 23 A 100% Avalanche testDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3620GA DFN2x2x0.75-6L 3620 3000
8.3. Size:1094K cn vgsemi
vs3620gpmc.pdf
VS3620GPMC30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.1 m VitoMOS TechnologyI D(Silicon Limited) 60 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN5x6Part ID Package Type Marking PackingVS3620GPMC PDFN5x6 3620GP 3000PCS/Reel
8.4. Size:1093K cn vgsemi
vs3620gemc.pdf
VS3620GEMC30V/40A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.9 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8 m Very low on-resistanceI D(Silicon Limited) 60 A VitoMOS TechnologyI D(Package Limited) 40 A Fast Switching and High efficiencyPDFN3333 100% Avalanche testPart ID Package Type Marking PackingVS3620GEMC
Datasheet: IRFP360LC
, IRFP3710
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