All MOSFET. VS3628GA Datasheet

 

VS3628GA MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS3628GA
   Marking Code: 3628
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.6 nC
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN2X2X0.75-6L

 VS3628GA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS3628GA Datasheet (PDF)

 ..1. Size:1116K  cn vgsemi
 vs3628ga.pdf

VS3628GA VS3628GA

VS3628GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 9.4 mR DS(on),TYP@ VGS=4.5 V 13 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3628GA DFN2x2x0.75-6L 3628 3000PCS/ReelMaximum ratings, at TA =25C,

 7.1. Size:1117K  cn vgsemi
 vs3628gp.pdf

VS3628GA VS3628GA

VS3628GP30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 9.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 13 m VitoMOS TechnologyI D(Silicon Limited) 26 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS3628GP PDFN5x6 3628GP 30

 7.2. Size:839K  cn vgsemi
 vs3628ge.pdf

VS3628GA VS3628GA

VS3628GE30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 13 m VitoMOS TechnologyI D(Silicon Limited) 45 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3628GE PDFN3333 3628G

 8.1. Size:1353K  cn vgsemi
 vs3628db.pdf

VS3628GA VS3628GA

VS3628DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 23 9 m High Current CapabilityI D 20 40 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3628DB DFN3x3 3

 8.2. Size:1215K  cn vgsemi
 vs3628de-g.pdf

VS3628GA VS3628GA

VS3628DE-G30V/14A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 10 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 14 m Enhancement modeI D(Silicon Limited) 38 A VitoMOS TechnologyI D(Package Limited) 14 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SE8205A | 4N65G-TM3-T | MMFT70R380PTH | PMFPB8032XP | MMF70R600PTH | TPC6001 | MDF13N65BTH

 

 
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