VS3638GA
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3638GA
Marking Code: 3638
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.3
nC
trⓘ - Rise Time: 7.8
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package: DFN2X2X0.75-6L
VS3638GA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3638GA
Datasheet (PDF)
..1. Size:1074K cn vgsemi
vs3638ga.pdf 
VS3638GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 mR DS(on),TYP@ VGS=4.5 V 18 m Enhancement mode VitoMOS Technology I D 12 A Low Gate ChargeDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3638GA DFN2x2x0.75-6L 3638 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Ratin
7.1. Size:1664K cn vgsemi
vs3638ge.pdf
VS3638GE30V/23A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 11 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m VitoMOS TechnologyI D(Silicon Limited) 40 A Fast Switching and High efficiencyI D(Package Limited) 23 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3638GE PDFN3333 3638GE
8.1. Size:1065K cn vgsemi
vs3638de-g.pdf
VS3638DE-G30V/15A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 12 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 20 m Enhancement modeI D(Silicon Limited) 27 A VitoMOS TechnologyI D(Package Limited) 15 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac
9.1. Size:836K cn vgsemi
vs3633ge.pdf
VS3633GE30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 9.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 15 m VitoMOS TechnologyI D(Silicon Limited) 32 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3633GE PDFN3333 3633G
9.2. Size:992K cn vgsemi
vs3633ga.pdf
VS3633GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 11 mR DS(on),TYP@ VGS=4.5 V 16 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3633GA DFN2x2x0.75-6L 3633 3000PCS/ReelMaximum ratings, at TA =25C,
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