VS3817GPMT MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3817GPMT
Marking Code: 3817GPM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: PDFN5X6
VS3817GPMT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3817GPMT Datasheet (PDF)
vs3817gpmt.pdf
VS3817GPMT30V/75A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 6.3 m Very low on-resistanceI D 75 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS3817GPMT PDFN5x6 3817GPM 3000pcs/ReelMaximum ratings, at T A=25 C, unless
vs3817ga.pdf
VS3817GA30V/20A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 6.2 m Very low on-resistanceI D 20 A VitoMOS TechnologyDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3817GA DFN2x2x0.75-6L 3817 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Param
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF640NS | 2SJ449 | TMPF16N60 | NCE30H10AK | IRFW634A | STP32N55M5 | ZXMP6A13G
History: IRF640NS | 2SJ449 | TMPF16N60 | NCE30H10AK | IRFW634A | STP32N55M5 | ZXMP6A13G
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918