VS3820GA2 Specs and Replacement

Type Designator: VS3820GA2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: DFN2X2X0.45-6L

VS3820GA2 substitution

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VS3820GA2 datasheet

 ..1. Size:1004K  cn vgsemi
 vs3820ga2.pdf pdf_icon

VS3820GA2

VS3820GA2 30V/13A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4.4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 7.2 m Very low on-resistance I D(Silicon Limited) 13 A VitoMOS Technology Fast Switching and High efficiency DFN2x2x0.45-6L Part ID Package Type Marking Packing VS3820GA2 DFN2x2x0.45-6L 3820GA 3000PCS/Reel Maximum ra... See More ⇒

 9.1. Size:1005K  cn vgsemi
 vs3825gpmc.pdf pdf_icon

VS3820GA2

VS3825GPMC 30V/30A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 7.3 m Enhancement mode R DS(on),TYP@ VGS=4.5V 11 m VitoMOS Technology I D(Wire bond limited) 30 A 100% Avalanche Tested,100% Rg Tested PDFN5x6 Part ID Package Type Marking Packing VS3825GPMC PDFN5x6 3825GP 3000pcs/Reel Maximum ratings, at T A=25 C, unless otherwise ... See More ⇒

Detailed specifications: VS3662DB, VS3698AD, VS3698AE, VS3698AP, VS3698AT, VS3803GPMT, VS3817GA, VS3817GPMT, 7N65, VS3825GPMC, VS40200AD, VS40200AP, VS40200ATD, VS4401AKH, VS4401AMH, VS4401ATH, VS4603DM6

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