VS6614DS Datasheet and Replacement
Type Designator: VS6614DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP8
VS6614DS substitution
VS6614DS Datasheet (PDF)
vs6614ds.pdf

VS6614DS65V/10A Dual N-Channel Advanced Power MOSFETV DS 65 VFeaturesR DS(on),TYP@ VGS=10 V 12 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m Low on-resistance RDS(on) @ VGS=4.5 VI D 10 A VitoMOS TechnologySOP8 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS6614DS SOP8 6614DS 3000pcs/reelMaxi
vs6614ds-k.pdf

VS6614DS-K65V/8A Dual N-Channel Advanced Power MOSFETV DS 65 VFeaturesR DS(on),TYP@ VGS=10V 14 m Enhancement modeR DS(on),TYP@ VGS=4.5V 20 m VitoMOS TechnologyI D(Silicon Limited) 8 A 100% Avalanche Tested,100% Rg TestedSOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS6614DS-K SOP8 6614D
vs6614gs.pdf

VS6614GS 60V/13A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 10.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 17 m Low on-resistance RDS(on) @ VGS=4.5 V I D 13 A VitoMOS Technology 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS661
Datasheet: VS4640AC , VS4646ACM , VS4698AP , VS4698DP , VS4802GKM , VS4802GMM , VS4802GPHT , VS4802GPMT , 75N75 , VS6614DS-K , VSA030C03LD , VSA030C03MD , VSD003N04MS-G , VSD005N03MS , VSD007N04MS-G , VSD020C04MC , VSE002N03MS-G .
History: 2SK1313S | NVF5P03 | AP95T08GP
Keywords - VS6614DS MOSFET datasheet
VS6614DS cross reference
VS6614DS equivalent finder
VS6614DS lookup
VS6614DS substitution
VS6614DS replacement
History: 2SK1313S | NVF5P03 | AP95T08GP



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