VS6614DS Specs and Replacement
Type Designator: VS6614DS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP8
VS6614DS substitution
- MOSFET ⓘ Cross-Reference Search
VS6614DS datasheet
vs6614ds.pdf
VS6614DS 65V/10A Dual N-Channel Advanced Power MOSFET V DS 65 V Features R DS(on),TYP@ VGS=10 V 12 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 20 m Low on-resistance RDS(on) @ VGS=4.5 V I D 10 A VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS6614DS SOP8 6614DS 3000pcs/reel Maxi... See More ⇒
vs6614ds-k.pdf
VS6614DS-K 65V/8A Dual N-Channel Advanced Power MOSFET V DS 65 V Features R DS(on),TYP@ VGS=10V 14 m Enhancement mode R DS(on),TYP@ VGS=4.5V 20 m VitoMOS Technology I D(Silicon Limited) 8 A 100% Avalanche Tested,100% Rg Tested SOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing VS6614DS-K SOP8 6614D... See More ⇒
vs6614gs.pdf
VS6614GS 60V/13A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 10.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 17 m Low on-resistance RDS(on) @ VGS=4.5 V I D 13 A VitoMOS Technology 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS661... See More ⇒
Detailed specifications: VS4640AC, VS4646ACM, VS4698AP, VS4698DP, VS4802GKM, VS4802GMM, VS4802GPHT, VS4802GPMT, 18N50, VS6614DS-K, VSA030C03LD, VSA030C03MD, VSD003N04MS-G, VSD005N03MS, VSD007N04MS-G, VSD020C04MC, VSE002N03MS-G
Keywords - VS6614DS MOSFET specs
VS6614DS cross reference
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VS6614DS substitution
VS6614DS replacement
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