VS6614DS-K MOSFET. Datasheet pdf. Equivalent
Type Designator: VS6614DS-K
Marking Code: 6614DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
VS6614DS-K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS6614DS-K Datasheet (PDF)
vs6614ds-k.pdf
VS6614DS-K65V/8A Dual N-Channel Advanced Power MOSFETV DS 65 VFeaturesR DS(on),TYP@ VGS=10V 14 m Enhancement modeR DS(on),TYP@ VGS=4.5V 20 m VitoMOS TechnologyI D(Silicon Limited) 8 A 100% Avalanche Tested,100% Rg TestedSOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS6614DS-K SOP8 6614D
vs6614ds.pdf
VS6614DS65V/10A Dual N-Channel Advanced Power MOSFETV DS 65 VFeaturesR DS(on),TYP@ VGS=10 V 12 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m Low on-resistance RDS(on) @ VGS=4.5 VI D 10 A VitoMOS TechnologySOP8 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS6614DS SOP8 6614DS 3000pcs/reelMaxi
vs6614gs.pdf
VS6614GS 60V/13A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 10.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 17 m Low on-resistance RDS(on) @ VGS=4.5 V I D 13 A VitoMOS Technology 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS661
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
