VSD007N04MS-G Specs and Replacement
Type Designator: VSD007N04MS-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 490 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
VSD007N04MS-G substitution
- MOSFET ⓘ Cross-Reference Search
VSD007N04MS-G datasheet
vsd007n04ms-g.pdf
VSD007N04MS-G 40V/90A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 3.6 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.3 m Very low on-resistance RDS(on) I D 90 A VitoMOS Technology TO-252 Fast Switching and High efficiency 100% Avalanche test Part ID Package Type Marking Packing VSD007N04MS-G TO-252 007N04M 2500PCS/Reel Max... See More ⇒
vsd007n06ms.pdf
VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 5.0 m N-Channel R DS(on),TYP@ VGS=4.5V 6.0 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat... See More ⇒
vsd004n03ms.pdf
VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.2 m N-Channel R DS(on),TYP@ VGS=4.5V 2.8 m Enhancement mode I D 150 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking infor... See More ⇒
vsd003n04ms-g.pdf
VSD003N04MS-G 40V/58A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 58 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested TO-252 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part I... See More ⇒
Detailed specifications: VS4802GPHT, VS4802GPMT, VS6614DS, VS6614DS-K, VSA030C03LD, VSA030C03MD, VSD003N04MS-G, VSD005N03MS, 2N60, VSD020C04MC, VSE002N03MS-G, VSE003N04MSC-G, VSE003N04MS-G, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G, VSE007N04MS-G
Keywords - VSD007N04MS-G MOSFET specs
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