VSE006N03MSC-G Specs and Replacement

Type Designator: VSE006N03MSC-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 465 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PDFN3333

VSE006N03MSC-G substitution

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VSE006N03MSC-G datasheet

 ..1. Size:1062K  cn vgsemi
vse006n03msc-g.pdf pdf_icon

VSE006N03MSC-G

VSE006N03MSC-G 30V/36A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4.2 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 7.3 m Very low on-resistance I D(Silicon Limited) 48 A VitoMOS Technology I D(Package Limited) 36 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE006N03MSC-G PDFN3333 006N... See More ⇒

 9.1. Size:1886K  cn vanguard
vse009ne6ms-g.pdf pdf_icon

VSE006N03MSC-G

VSE009NE6MS-G 60V/50A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10V 7 m Enhancement mode R DS(on),TYP@ VGS=4.5V 12 m VitoMOS Technology I D 50 A Fast Switching and High efficiency PDFN3333 100% Avalanche Tested Part ID Package Type Marking Packing VSE009NE6MS-G PDFN3333 009NE6M 5000pcs/Reel Maximum ratings, at T A=25 C, unle... See More ⇒

 9.2. Size:984K  cn vgsemi
vse008ne2ls.pdf pdf_icon

VSE006N03MSC-G

VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS 25 V Features R DS(on),TYP@ VGS=10 V 5.8 m N-Channel 3.3V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High Efficiency I D 55 A Fast Switching Enhancement mode PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSE008NE2... See More ⇒

 9.3. Size:966K  cn vgsemi
vse004n04ms.pdf pdf_icon

VSE006N03MSC-G

VSE004N04MS 40V/48A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE004N04MS PDFN3333 004N04M 5000PCS/Reel Maximum ratings, at TA =25... See More ⇒

Detailed specifications: VSD005N03MS, VSD007N04MS-G, VSD020C04MC, VSE002N03MS-G, VSE003N04MSC-G, VSE003N04MS-G, VSE004N04MS, VSE005N03MS, IRF1405, VSE007N04MS-G, VSE008N03LS, VSE008NE2LS, VSE044C03MD, VSE2R5N03MS, VSO007N04MS-G, VSP002N03MS, VSP002N03MS-G

Keywords - VSE006N03MSC-G MOSFET specs

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 VSE006N03MSC-G replacement

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