VSE006N03MSC-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VSE006N03MSC-G
Маркировка: 006N03M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 19 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 48 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 15 nC
Время нарастания (tr): 59 ns
Выходная емкость (Cd): 465 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0055 Ohm
Тип корпуса: PDFN3333
Аналог (замена) для VSE006N03MSC-G
VSE006N03MSC-G Datasheet (PDF)
vse006n03msc-g.pdf
VSE006N03MSC-G30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.3 m Very low on-resistanceI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE006N03MSC-G PDFN3333 006N
vse009ne6ms-g.pdf
VSE009NE6MS-G60V/50A N-Channel Advanced Power MOSFETV DS 60 VFeaturesR DS(on),TYP@ VGS=10V 7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 12 m VitoMOS TechnologyI D 50 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVSE009NE6MS-G PDFN3333 009NE6M 5000pcs/ReelMaximum ratings, at T A=25 C, unle
vse008ne2ls.pdf
VSE008NE2LS25V/55A N-Channel Advanced Power MOSFETV DS 25 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel3.3V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High EfficiencyI D 55 A Fast Switching Enhancement modePDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008NE2
vse004n04ms.pdf
VSE004N04MS40V/48A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE004N04MS PDFN3333 004N04M 5000PCS/ReelMaximum ratings, at TA =25
vse002n03ms-g.pdf
VSE002N03MS-G30V/155A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 VI D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiencyPDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen
vse003n04ms-g.pdf
VSE003N04MS-G40V/40A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.8 m Low RDS(on) to minimize conduction lossesI D(Package Limited) 40 A VitoMOS Technology Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses 100% Avalanche Tested,100% Rg Tested PDFN3333Part
vse003n04msc-g.pdf
VSE003N04MSC-G40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),Typ@ VGS=10 V 2.3 m Enhancement modeR DS(on),Typ@ VGS=4.5 V 3.4 m Very Low On-ResistanceI D 100 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 100% Avalanche testPart ID Package Type Marking PackingVSE003N04MSC-G PDFN3333 03N04M 5000PCS/ReelMax
vse005n03ms.pdf
VSE005N03MS30V/78A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.2 m Enhancement modeI D 78 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing
vse008n03ls.pdf
VSE008N03LS30V/42A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 42 A Fast Switching and High efficiency 100% Avalanche testPDFN3333 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008N03LS PDFN3333 0
vse007n04ms-g.pdf
VSE007N04MS-G40V/75A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.2 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.9 m Low on-resistance RDS(on) @ VGS=4.5 VI D 75 A VitoMOS TechnologyPDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen freePart ID Package Type Marking PackingVSE007
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