All MOSFET. VSE008NE2LS Datasheet

 

VSE008NE2LS Datasheet and Replacement


   Type Designator: VSE008NE2LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3333
 

 VSE008NE2LS substitution

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VSE008NE2LS Datasheet (PDF)

 ..1. Size:984K  cn vgsemi
vse008ne2ls.pdf pdf_icon

VSE008NE2LS

VSE008NE2LS25V/55A N-Channel Advanced Power MOSFETV DS 25 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel3.3V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High EfficiencyI D 55 A Fast Switching Enhancement modePDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008NE2

 7.1. Size:964K  cn vgsemi
vse008n03ls.pdf pdf_icon

VSE008NE2LS

VSE008N03LS30V/42A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 42 A Fast Switching and High efficiency 100% Avalanche testPDFN3333 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008N03LS PDFN3333 0

 9.1. Size:1886K  cn vanguard
vse009ne6ms-g.pdf pdf_icon

VSE008NE2LS

VSE009NE6MS-G60V/50A N-Channel Advanced Power MOSFETV DS 60 VFeaturesR DS(on),TYP@ VGS=10V 7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 12 m VitoMOS TechnologyI D 50 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVSE009NE6MS-G PDFN3333 009NE6M 5000pcs/ReelMaximum ratings, at T A=25 C, unle

 9.2. Size:966K  cn vgsemi
vse004n04ms.pdf pdf_icon

VSE008NE2LS

VSE004N04MS40V/48A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE004N04MS PDFN3333 004N04M 5000PCS/ReelMaximum ratings, at TA =25

Datasheet: VSE002N03MS-G , VSE003N04MSC-G , VSE003N04MS-G , VSE004N04MS , VSE005N03MS , VSE006N03MSC-G , VSE007N04MS-G , VSE008N03LS , STP65NF06 , VSE044C03MD , VSE2R5N03MS , VSO007N04MS-G , VSP002N03MS , VSP002N03MS-G , VSP002N03MST-G , VSP003N04HS-G , VSP003N04MS-G .

History: DHB3N90 | UTC654 | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | AM90N06-04M2B

Keywords - VSE008NE2LS MOSFET datasheet

 VSE008NE2LS cross reference
 VSE008NE2LS equivalent finder
 VSE008NE2LS lookup
 VSE008NE2LS substitution
 VSE008NE2LS replacement

 

 
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