VSE008NE2LS - описание и поиск аналогов

 ..1. Size:984K  cn vgsemi
 vse008ne2ls.pdf 

VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS 25 V Features R DS(on),TYP@ VGS=10 V 5.8 m N-Channel 3.3V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High Efficiency I D 55 A Fast Switching Enhancement mode PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSE008NE2

 7.1. Size:964K  cn vgsemi
 vse008n03ls.pdf 

VSE008N03LS 30V/42A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 10 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 11 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 42 A Fast Switching and High efficiency 100% Avalanche test PDFN3333 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSE008N03LS PDFN3333 0

 9.1. Size:1886K  cn vanguard
 vse009ne6ms-g.pdf 

VSE009NE6MS-G 60V/50A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10V 7 m Enhancement mode R DS(on),TYP@ VGS=4.5V 12 m VitoMOS Technology I D 50 A Fast Switching and High efficiency PDFN3333 100% Avalanche Tested Part ID Package Type Marking Packing VSE009NE6MS-G PDFN3333 009NE6M 5000pcs/Reel Maximum ratings, at T A=25 C, unle

 9.2. Size:966K  cn vgsemi
 vse004n04ms.pdf 

VSE004N04MS 40V/48A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE004N04MS PDFN3333 004N04M 5000PCS/Reel Maximum ratings, at TA =25

 9.3. Size:1250K  cn vgsemi
 vse002n03ms-g.pdf 

VSE002N03MS-G 30V/155A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 1.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 V I D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen

 9.4. Size:1062K  cn vgsemi
 vse006n03msc-g.pdf 

VSE006N03MSC-G 30V/36A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4.2 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 7.3 m Very low on-resistance I D(Silicon Limited) 48 A VitoMOS Technology I D(Package Limited) 36 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE006N03MSC-G PDFN3333 006N

 9.5. Size:926K  cn vgsemi
 vse003n04ms-g.pdf 

VSE003N04MS-G 40V/40A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.6 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 2.8 m Low RDS(on) to minimize conduction losses I D(Package Limited) 40 A VitoMOS Technology Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses 100% Avalanche Tested,100% Rg Tested PDFN3333 Part

 9.6. Size:1246K  cn vgsemi
 vse003n04msc-g.pdf 

VSE003N04MSC-G 40V/100A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),Typ@ VGS=10 V 2.3 m Enhancement mode R DS(on),Typ@ VGS=4.5 V 3.4 m Very Low On-Resistance I D 100 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 100% Avalanche test Part ID Package Type Marking Packing VSE003N04MSC-G PDFN3333 03N04M 5000PCS/Reel Max

 9.7. Size:1239K  cn vgsemi
 vse005n03ms.pdf 

VSE005N03MS 30V/78A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.8 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 4.2 m Enhancement mode I D 78 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing

 9.8. Size:1066K  cn vgsemi
 vse007n04ms-g.pdf 

VSE007N04MS-G 40V/75A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 3.2 m Enhancement mode R DS(on),TYP@ VGS=4.5V 4.9 m Low on-resistance RDS(on) @ VGS=4.5 V I D 75 A VitoMOS Technology PDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen free Part ID Package Type Marking Packing VSE007