ME1302AT3 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME1302AT3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.3 nC
trⓘ - Rise Time: 41.9 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
Package: SOT323
ME1302AT3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME1302AT3 Datasheet (PDF)
me1302at3 me1302at3-g.pdf
ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on
me1303at3 me1303at3-g.pdf
ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m@VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
