ME1302AT3-G Specs and Replacement

Type Designator: ME1302AT3-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41.9 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm

Package: SOT323

ME1302AT3-G substitution

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ME1302AT3-G datasheet

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ME1302AT3-G

ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on... See More ⇒

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ME1302AT3-G

ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m @VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180... See More ⇒

Detailed specifications: JCS740CC, JCS740FC, FTP11N08A, JY09M, ME100N03T, ME100N03T-G, ME120N04T, ME1302AT3, IRFB4110, ME1303AT3, ME1303AT3-G, ME13N10A, ME13N10A-G, ME15N25, ME15N25F, ME15N25F-G, ME15N25-G

Keywords - ME1302AT3-G MOSFET specs

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