All MOSFET. ME1302AT3-G Datasheet

 

ME1302AT3-G Datasheet and Replacement


   Type Designator: ME1302AT3-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41.9 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
   Package: SOT323
 

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ME1302AT3-G Datasheet (PDF)

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ME1302AT3-G

ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on

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 me1303at3 me1303at3-g.pdf pdf_icon

ME1302AT3-G

ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m@VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180

Datasheet: JCS740CC , JCS740FC , FTP11N08A , JY09M , ME100N03T , ME100N03T-G , ME120N04T , ME1302AT3 , IRF640N , ME1303AT3 , ME1303AT3-G , ME13N10A , ME13N10A-G , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G .

Keywords - ME1302AT3-G MOSFET datasheet

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