All MOSFET. ME1303AT3 Datasheet

 

ME1303AT3 Datasheet and Replacement


   Type Designator: ME1303AT3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: SOT323
 

 ME1303AT3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

ME1303AT3 Datasheet (PDF)

 ..1. Size:1098K  matsuki electric
 me1303at3 me1303at3-g.pdf pdf_icon

ME1303AT3

ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m@VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180

 9.1. Size:1272K  matsuki electric
 me1302at3 me1302at3-g.pdf pdf_icon

ME1303AT3

ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on

Datasheet: JCS740FC , FTP11N08A , JY09M , ME100N03T , ME100N03T-G , ME120N04T , ME1302AT3 , ME1302AT3-G , IRF630 , ME1303AT3-G , ME13N10A , ME13N10A-G , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , ME200N04T .

History: SWHA15N04V | IRF7316QPBF

Keywords - ME1303AT3 MOSFET datasheet

 ME1303AT3 cross reference
 ME1303AT3 equivalent finder
 ME1303AT3 lookup
 ME1303AT3 substitution
 ME1303AT3 replacement

 

 
Back to Top

 


 
.