ME1303AT3 MOSFET Datasheet: P-Ch, 20V, 2.6A. Full specification with pinout and replacement list

ME1303AT3 Specs and Replacement

Type Designator: ME1303AT3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 200 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: SOT323

ME1303AT3 substitution

- MOSFET ⓘ Cross-Reference Search

ME1303AT3 datasheet

..1. Size:1098K matsuki electric
me1303at3 me1303at3-g.pdf pdf_icon

ME1303AT3/ME1303AT3-G P-Channel Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME1303AT3 is the P-Channel logic enhancement mode power -20V/-3.4A,RDS(ON)=95m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS -20V/-2.4A,RDS(ON)=120m @VGS=-2.5V trench technology. This high density process is especially tailored to -20V/-1.7A,RDS(ON)=180... See More ⇒

9.1. Size:1272K matsuki electric
me1302at3 me1302at3-g.pdf pdf_icon

ME1302AT3/ME1302AT3-G N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME1302AT3 is the N-Channel logic enhancement mode power RDS(ON)= 132 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)= 144 m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)= 185 m @VGS=2.5V minimize on... See More ⇒

Detailed specifications: JCS740FC , FTP11N08A , JY09M , ME100N03T , ME100N03T-G , ME120N04T , ME1302AT3 , ME1302AT3-G , IRF640N , ME1303AT3-G , ME13N10A , ME13N10A-G , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , ME200N04T .