ME200N04T Specs and Replacement
Type Designator: ME200N04T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 189 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 767 nS
Cossⓘ - Output Capacitance: 1242 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
ME200N04T substitution
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ME200N04T datasheet
me200n04t me200n04t-g.pdf
ME200N04T / ME200N04T-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 3.5m @VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON) 4.7m @VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec... See More ⇒
Detailed specifications: ME1303AT3, ME1303AT3-G, ME13N10A, ME13N10A-G, ME15N25, ME15N25F, ME15N25F-G, ME15N25-G, 2N7000, ME200N04T-G, ME20N10-G, ME20N15F, ME2301A, ME2301A-G, ME2301DC, ME2301DC-G, ME2301DN
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