All MOSFET. ME200N04T Datasheet

 

ME200N04T Datasheet and Replacement


   Type Designator: ME200N04T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 189 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 137 nC
   tr ⓘ - Rise Time: 767 nS
   Cossⓘ - Output Capacitance: 1242 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220
 

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ME200N04T Datasheet (PDF)

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ME200N04T

ME200N04T / ME200N04T-GN- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.5m@VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON)4.7m@VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Datasheet: ME1303AT3 , ME1303AT3-G , ME13N10A , ME13N10A-G , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , IRF9540 , ME200N04T-G , ME20N10-G , ME20N15F , ME2301A , ME2301A-G , ME2301DC , ME2301DC-G , ME2301DN .

History: MEE3716T | GSM3458

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