ME2301DN-G Specs and Replacement
Type Designator: ME2301DN-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 831 nS
Cossⓘ - Output Capacitance: 53 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: DFN1006-3
ME2301DN-G substitution
- MOSFET ⓘ Cross-Reference Search
ME2301DN-G datasheet
me2301dn me2301dn-g.pdf
ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig... See More ⇒
me2301dc me2301dc-g.pdf
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design ... See More ⇒
me2301a me2301a-g.pdf
ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat... See More ⇒
me2301 me2301-g.pdf
ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es... See More ⇒
Detailed specifications: ME200N04T-G, ME20N10-G, ME20N15F, ME2301A, ME2301A-G, ME2301DC, ME2301DC-G, ME2301DN, STP75NF75, ME2301GC, ME2301GC-G, ME2301S, ME2301S-G, ME2302-G, ME2303, ME2303-G, ME2305
Keywords - ME2301DN-G MOSFET specs
ME2301DN-G cross reference
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ME2301DN-G substitution
ME2301DN-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
