ME2301DN-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ME2301DN-G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 831 ns
Cossⓘ - Выходная емкость: 53 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: DFN1006-3L
Аналог (замена) для ME2301DN-G
ME2301DN-G Datasheet (PDF)
me2301dn me2301dn-g.pdf
ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m@VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig
me2301dc me2301dc-g.pdf
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m@VGS=-4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 150m@VGS=-2.5Vtrench technology. This high density process is especially tailored to Super high density cell design
me2301a me2301a-g.pdf
ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m@VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m@VGS=-1.8V minimize on-stat
me2301 me2301-g.pdf
ME2301/ME2301-G P-Channel Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es
me2301gc me2301gc-g.pdf
ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m@VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m@VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=-1.8V trench technology. This high density process is especially tailored to Sup
me2301s me2301s-g.pdf
ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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